2
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25?C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25?C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25?C
Storage Temperature
TSTG
-65, +150
?C
Operating Junction Temperature
TJ
225
?C
Maximum Forward Gate Current
IGMAX
7.0
mA
25?C
Maximum Drain Current1
IMAX
3
A
25?C
Soldering Temperature2
TS
245
?C
Screw Torque
τ
60
in-oz
Thermal Resistance, Junction to Case3
RθJC
4.8
?C/W
85?C
Case Operating Temperature3,4
TC
-40, +150
?C
30 seconds
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at
www.cree.com/products/wireless_appnotes.asp
3
Measured for the CGH55030 at P
DISS = 28 W.
See also, the Power Dissipation De-rating Curve on Page 5.
4
Electrical Characteristics (TC
= 25?C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
–2.3
VDC
VDS
= 10 V, I
D
= 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-3.0
–
VDC
VDS
= 28 V, I
D
= 250 mA
Saturated Drain Current
IDS
5.8
7.0
–
A
VDS
= 6.0 V, V
GS
= 2 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS
= -8 V, I
D
= 7.2 mA
RF Characteristics2
(T
C
= 25
?C, F0
= 5.65 GHz unless otherwise noted)
Small Signal Gain
GSS
9.0
11.0
-
dB
VDD
= 28 V, I
DQ
= 250 mA
Power Output3
PSAT
20
30
–
W
VDD
= 28 V, I
DQ
= 250 mA
Drain Effciency
4
η
50
60
–
%
VDD
= 28 V, I
DQ
= 250 mA, P
SAT
Output Mismatch Stress
VSWR
-
–
10 : 1
Y
No damage at all phase angles,
VDD
= 28 V, I
DQ
= 250 mA, P
SAT
Dynamic Characteristics
Input Capacitance
CGS
–
9.0
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
CDS
–
2.6
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.4
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2 Measured in CGH55030-TB.
3
P
SAT
is defned as I
G
= 0.72 mA.
4
Drain Effciency = P
OUT
/ P
DC
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